| PART |
Description |
Maker |
| SIGC156T120R2CL |
IGBTs - HV Chips - SIGC156T120R2CL, 1200V, 100A
|
Infineon
|
| SIGC121T120R2CL |
IGBTs - HV Chips - SIGC121T120R2CL, 1200V, 75A
|
Infineon
|
| SIGC121T120R2C |
IGBTs - HV Chips - SIGC121T120R2C, 1200V, 75A
|
Infineon
|
| SIGC15T60UN |
IGBTs - HV Chips - SIGC15T60UN, 600V, 15A
|
Infineon
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| SSB-COB6527GW |
65mm x 27mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN CHIPS, 44 CHIPS, 4.2V 220mA
|
LUMEX INC.
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-20EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| SGB07N120 SGP07N120 |
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 7A 1200V TO263AB SMD IGBT
IGBTs & DuoPacks - 7A 1200V TO 220AB IGBT
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
